Extreme Environment Electronics
-10%
portes grátis
Extreme Environment Electronics
Cressler, John D.; Mantooth, H. Alan
Taylor & Francis Ltd
07/2021
1042
Mole
Inglês
9781138074224
15 a 20 dias
1923
Descrição não disponível.
Introduction. Background. Environments and Prediction Tools. Semiconductor Device Technologies for Extreme Environments. Modeling for Extreme Environment Electronic Design. Device and Circuit Reliability in Extreme Environments. Circuit Design for Extreme Environments. Examples of Extreme Environment Circuit Designs. Verification of Analog and Mixed-Signal Systems. Packaging for Extreme Environments. Real-World Extreme Environment Applications. Appendices. Index.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Arkansas Power Electronics International;MOS Device;extreme environment electronics;MOS Transistor;integrated circuit design;SiGe HBT;semiconductor device modeling;device reliability;SRAM Cell;space electronics;SiGe HBTs;radiation effects;IEEE Trans;electronic packaging;PNP.;design analog circuits in extreme environments;SiC Power Device;design digital circuits in extreme environments;Extreme Environment Application;H. Alan Mantooth;SiGe BiCMOS;Cressler John D.;SOI CMOS;Paul W. Marshall;Single Event Effects;Ronald Pease;Bulk CMOS;Guofu Niu;SOI;Martha O'Bryan;Tid;Richard L. Patterson;Interface Traps;Ahmad Hammoud;TCAD Simulation;Kolawa Elizabeth;Ion Strike;Mojarradi Mohammad;CMOS Device;Castillo Linda Del;Compact Models;Brewer Dana;IEEE Electron Dev;Barth Janet;CMOS Technology;Keys Andrew S.;Power Consumption;Hunter Gary W.;Culley Dennis;Jonathan A. Pellish;Lewis M. Cohn;Moen Kurt A.;Reed Robert;Galloway Kenneth F.;Schrimpf Ronald D.;Michael Xapsos;James H. Adams;Robert A. Weller;Alexander B. Lostetter;Wilson Peter;Lloyd W. Massengill;Aravind C. Appaswamy;Rajan Arora;Jiahui Yuan;Philip G. Neudeck;Edward P. Wilcox;Trevor J. Thornton;William Lepkowski;Seth J. Wilk;Mohammad Reza Ghajar;Asha Balijepalli;Joseph Ervin;Shyh-Chiang Shen;Cheryl J. Marshall;Michael L. Alles;Richard W. Berger;Paul S. Fechner;Jerry Yue;Bruce Ohme;Ashok Raman;Marek Turowski;Kurt A. Moen;A. Matt Francis;Avinash S. Kashyap;Ty R. McNutt;Jeffrey S. Kauppila;Jim Holmes;Fernando Guarin;Stewart Rauch;Yuan Chen;Jeffrey D. Black;Stanley D. Phillips;Benjamin J. Blalock;Peter Wilson;Robert Rudolf;Reuben Wilcock;Laleh Najafizadeh;Joseph C. Bardin;Fa Foster Dai;Desheng Ma;Yuan Yao;Zhenqi Chen;T. Daniel Loveless;Sachin Seth;Melanie Berg;Li Kenneth;Michael Johnson;Jia Di;Scott C. Smith;Stephen J. Horst;Mohammad Mojarradi;Philippe Adell;Marcelo Schupbach;Michael J. Krasowski;N.F. Prokop;Mohammad Rez Ghajar;Keith Hobert;Bertan Bakkaloglu;Chip Webber;R. Wayne Johnson;Linda Del Castillo;Jared Hornberger;Brice McPherson;Brandon Passmore;Ryan M. Diestelhorst;Troy D. England;Colin McKinney;Shahid Aslam;Akin Akturk;Gerard Quilligan;David A. Sunderland;William Kuhn;Yogesh Tugnawat;Randy Normann;Alexander A. Grillo;Veljko Radeka;Gianluigi de Geronimo;Shaorui Li;Tushar Thrivikraman
Introduction. Background. Environments and Prediction Tools. Semiconductor Device Technologies for Extreme Environments. Modeling for Extreme Environment Electronic Design. Device and Circuit Reliability in Extreme Environments. Circuit Design for Extreme Environments. Examples of Extreme Environment Circuit Designs. Verification of Analog and Mixed-Signal Systems. Packaging for Extreme Environments. Real-World Extreme Environment Applications. Appendices. Index.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Arkansas Power Electronics International;MOS Device;extreme environment electronics;MOS Transistor;integrated circuit design;SiGe HBT;semiconductor device modeling;device reliability;SRAM Cell;space electronics;SiGe HBTs;radiation effects;IEEE Trans;electronic packaging;PNP.;design analog circuits in extreme environments;SiC Power Device;design digital circuits in extreme environments;Extreme Environment Application;H. Alan Mantooth;SiGe BiCMOS;Cressler John D.;SOI CMOS;Paul W. Marshall;Single Event Effects;Ronald Pease;Bulk CMOS;Guofu Niu;SOI;Martha O'Bryan;Tid;Richard L. Patterson;Interface Traps;Ahmad Hammoud;TCAD Simulation;Kolawa Elizabeth;Ion Strike;Mojarradi Mohammad;CMOS Device;Castillo Linda Del;Compact Models;Brewer Dana;IEEE Electron Dev;Barth Janet;CMOS Technology;Keys Andrew S.;Power Consumption;Hunter Gary W.;Culley Dennis;Jonathan A. Pellish;Lewis M. Cohn;Moen Kurt A.;Reed Robert;Galloway Kenneth F.;Schrimpf Ronald D.;Michael Xapsos;James H. Adams;Robert A. Weller;Alexander B. Lostetter;Wilson Peter;Lloyd W. Massengill;Aravind C. Appaswamy;Rajan Arora;Jiahui Yuan;Philip G. Neudeck;Edward P. Wilcox;Trevor J. Thornton;William Lepkowski;Seth J. Wilk;Mohammad Reza Ghajar;Asha Balijepalli;Joseph Ervin;Shyh-Chiang Shen;Cheryl J. Marshall;Michael L. Alles;Richard W. Berger;Paul S. Fechner;Jerry Yue;Bruce Ohme;Ashok Raman;Marek Turowski;Kurt A. Moen;A. Matt Francis;Avinash S. Kashyap;Ty R. McNutt;Jeffrey S. Kauppila;Jim Holmes;Fernando Guarin;Stewart Rauch;Yuan Chen;Jeffrey D. Black;Stanley D. Phillips;Benjamin J. Blalock;Peter Wilson;Robert Rudolf;Reuben Wilcock;Laleh Najafizadeh;Joseph C. Bardin;Fa Foster Dai;Desheng Ma;Yuan Yao;Zhenqi Chen;T. Daniel Loveless;Sachin Seth;Melanie Berg;Li Kenneth;Michael Johnson;Jia Di;Scott C. Smith;Stephen J. Horst;Mohammad Mojarradi;Philippe Adell;Marcelo Schupbach;Michael J. Krasowski;N.F. Prokop;Mohammad Rez Ghajar;Keith Hobert;Bertan Bakkaloglu;Chip Webber;R. Wayne Johnson;Linda Del Castillo;Jared Hornberger;Brice McPherson;Brandon Passmore;Ryan M. Diestelhorst;Troy D. England;Colin McKinney;Shahid Aslam;Akin Akturk;Gerard Quilligan;David A. Sunderland;William Kuhn;Yogesh Tugnawat;Randy Normann;Alexander A. Grillo;Veljko Radeka;Gianluigi de Geronimo;Shaorui Li;Tushar Thrivikraman
