Electronic Conduction
-10%
portes grátis
Electronic Conduction
Classical and Quantum Theory to Nanoelectronic Devices
Xanthakis, John P.
Taylor & Francis Ltd
12/2020
296
Dura
Inglês
9781138583863
15 a 20 dias
730
Descrição não disponível.
I. Prerequisites: Quantum Mechanics and The Electronic States in Solids. 1. Quantum Mechanics. 1.1. The two-slit experiment. 1.2. The Schroedinger Equation. 1.3. Particle in a Rectangular Quantum Box. 1.4. Heisenberg's Uncertainty Principle. 1.5. The Pauli Principle and the Fermi Dirac Probability. 1.6. The Hydrogen atom and the atoms of the Periodic Table. 1.7. Barrier Penetration and Tunneling. 1.8. Probability Current Density. 2. Electron States in Solids. 2.1. Qualitative Description of Energy Bands in Solids. 2.2. The k-space and Bloch's Theorem. 2.3. The LCAO method. 2.4. Quick Revision of the concept of a Hole and Doping. 2.5. Velocity of electrons in Solids. 2.6. The concept of Effective Mass. 2.7. Concentration of Carriers in Semiconductors and Metals. 2.8. The Effective Mass Equation. II. Theory Of Conduction. 3. Simple Classical Theory of Conduction. 3.1. External voltages and Fermi levels. 3.2. Collisions and drift mobility. 3.3. Mechanisms of scattering. 3.4. Recombination of carriers. 3.5 Diffusion Current. 3.6. Continuity Equations. 3.7. The ideal PN junction at equilibrium. 3.8. The ideal PN junction under bias. 3.9. The non-ideal PN junction. 3.10. The Metal-Semiconductor or Schottky junction. 4. Advanced Classical Theory of conduction. 4.1. The need for a better classical theory of conduction. 4.2. The Boltzman equation. 4.3. Solution of the Boltzman equation by the relaxation time approximation. 4.4. Application of an Electric Field. 4.5. Diffusion Currents. 4.6. General Expression for the Current Density. 4.7. The Seebeck-Thermoelectric Effect. 4.8. Saturation of drift velocity. 4.9. The Gunn Effect and velocity overshoot. 4.10. The classical Hall Effect. Chapter 5. The Quantum Theory of Conduction. 5.1. Critique of the Boltzmann Equation and Regimes of conduction. 5.2. Electronic Structure of Low-dimensional Systems. 5.3. The Landauer Formalism. 5.4. The Effective Mass Equation for Heterostructures. 5.5. Transmission Matrices and Airy Function. 5.6. The Resonant Tunneling Diode RTD. III. Devices. Chapter 6: Field Emission and Vacuum Devices. 6.1. Introduction. 6.2. The One-dimensional WKB Equation. 6.3. Field Emission from Planar Surfaces. 6.4. The Three-dimensional WKB Problem. 6.5. Field Emission from Curved Surfaces. 6.6. The Vacuum Transistor. Chapter 7. The MOSFET. 7.1. Basic Operation. 7.2. Simple Classical Theory of the MOSFET. 7.3. Advanced Classical Theory of the MOSFET. 7.4. Quantum Theory of the MOSFET. 7.5. Time-Dependent Performance and Moores' law. 7.6. Non-Planar Si MOSFETs and the FinFET. Chapter 8. Post -Si FETs. 8.1. Introduction. 8.2. Simple Theory of the HEMT or MODFET. 8.3. Advanced theory of the HEMT. 8.4. The III-V MOSFET. 8.5. The Carbon Nanotube FET, CNTFET. Appendices. A1. Angular Momentum and Spin. A2. Lattice Vibrations. A3. Calculation of Impurity States in Semiconductors. A4. Direct and Indirect Gap Semiconductors and Optical Properties.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Schroedinger Equation;Fermi Level;nanoelectronics;PN Junction;electronic structure;Small Signal Equivalent Circuit;electronic materials properties;Conduction Band;electrical conduction;Boltzmann Equation;microelectronics;Transmission Coefficient;Nanoelectronic devices;Metal Oxide Semiconductor Field Effect Transistor;Ouantum theory;Gate Voltage;Solid state theory;Electric Field;Quantum mechanics;Depletion Region;Electronic conduction;Vice Versa;FCC Lattice;Si MOSFET;MOS Structure;Carbon Nanotube FET;Short Channel MOSFET;RTD;BCC Lattice;LCAO Method;Valence Band;Minority Carriers;BZ;Reciprocal Lattice
I. Prerequisites: Quantum Mechanics and The Electronic States in Solids. 1. Quantum Mechanics. 1.1. The two-slit experiment. 1.2. The Schroedinger Equation. 1.3. Particle in a Rectangular Quantum Box. 1.4. Heisenberg's Uncertainty Principle. 1.5. The Pauli Principle and the Fermi Dirac Probability. 1.6. The Hydrogen atom and the atoms of the Periodic Table. 1.7. Barrier Penetration and Tunneling. 1.8. Probability Current Density. 2. Electron States in Solids. 2.1. Qualitative Description of Energy Bands in Solids. 2.2. The k-space and Bloch's Theorem. 2.3. The LCAO method. 2.4. Quick Revision of the concept of a Hole and Doping. 2.5. Velocity of electrons in Solids. 2.6. The concept of Effective Mass. 2.7. Concentration of Carriers in Semiconductors and Metals. 2.8. The Effective Mass Equation. II. Theory Of Conduction. 3. Simple Classical Theory of Conduction. 3.1. External voltages and Fermi levels. 3.2. Collisions and drift mobility. 3.3. Mechanisms of scattering. 3.4. Recombination of carriers. 3.5 Diffusion Current. 3.6. Continuity Equations. 3.7. The ideal PN junction at equilibrium. 3.8. The ideal PN junction under bias. 3.9. The non-ideal PN junction. 3.10. The Metal-Semiconductor or Schottky junction. 4. Advanced Classical Theory of conduction. 4.1. The need for a better classical theory of conduction. 4.2. The Boltzman equation. 4.3. Solution of the Boltzman equation by the relaxation time approximation. 4.4. Application of an Electric Field. 4.5. Diffusion Currents. 4.6. General Expression for the Current Density. 4.7. The Seebeck-Thermoelectric Effect. 4.8. Saturation of drift velocity. 4.9. The Gunn Effect and velocity overshoot. 4.10. The classical Hall Effect. Chapter 5. The Quantum Theory of Conduction. 5.1. Critique of the Boltzmann Equation and Regimes of conduction. 5.2. Electronic Structure of Low-dimensional Systems. 5.3. The Landauer Formalism. 5.4. The Effective Mass Equation for Heterostructures. 5.5. Transmission Matrices and Airy Function. 5.6. The Resonant Tunneling Diode RTD. III. Devices. Chapter 6: Field Emission and Vacuum Devices. 6.1. Introduction. 6.2. The One-dimensional WKB Equation. 6.3. Field Emission from Planar Surfaces. 6.4. The Three-dimensional WKB Problem. 6.5. Field Emission from Curved Surfaces. 6.6. The Vacuum Transistor. Chapter 7. The MOSFET. 7.1. Basic Operation. 7.2. Simple Classical Theory of the MOSFET. 7.3. Advanced Classical Theory of the MOSFET. 7.4. Quantum Theory of the MOSFET. 7.5. Time-Dependent Performance and Moores' law. 7.6. Non-Planar Si MOSFETs and the FinFET. Chapter 8. Post -Si FETs. 8.1. Introduction. 8.2. Simple Theory of the HEMT or MODFET. 8.3. Advanced theory of the HEMT. 8.4. The III-V MOSFET. 8.5. The Carbon Nanotube FET, CNTFET. Appendices. A1. Angular Momentum and Spin. A2. Lattice Vibrations. A3. Calculation of Impurity States in Semiconductors. A4. Direct and Indirect Gap Semiconductors and Optical Properties.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Schroedinger Equation;Fermi Level;nanoelectronics;PN Junction;electronic structure;Small Signal Equivalent Circuit;electronic materials properties;Conduction Band;electrical conduction;Boltzmann Equation;microelectronics;Transmission Coefficient;Nanoelectronic devices;Metal Oxide Semiconductor Field Effect Transistor;Ouantum theory;Gate Voltage;Solid state theory;Electric Field;Quantum mechanics;Depletion Region;Electronic conduction;Vice Versa;FCC Lattice;Si MOSFET;MOS Structure;Carbon Nanotube FET;Short Channel MOSFET;RTD;BCC Lattice;LCAO Method;Valence Band;Minority Carriers;BZ;Reciprocal Lattice
